Evaluation of Radiation Damaged P-in-n and N-in-n Silicon Microstrip Detectors
نویسندگان
چکیده
Two p-in-n and one n-in-n silicon microstrip detectors were radiation-damaged and tested in a beam. A comparison was made between the p-in-n and the n-in-n in high resistivity wafers, and the p-in-n in a low and a high resistivity wafer. The charge collection showed a clear difference in the n-in-n and the p-in-n detectors, which suggested that the signals were shared between strips more in the irradiated p-in-n detectors. Although a difference of the low and the high resistivity wafers was observed in the body capacitance measurement, little difference was observed in the beamtest results.
منابع مشابه
Radiation Damage Studies of Silicon Microstrip Sensors
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